The Electrical Properties Of Fabricated Pentacene Based Phototransistor
With Polystyrene Gate Insulator

dc.contributor.author	Ruzgar, Serif
dc.contributor.author	Caglar, Mujdat
dc.date.accessioned	2021-12-15T10:46:31Z
dc.date.available	2021-12-15T10:46:31Z
dc.date.issued	2020
dc.identifier.issn	2147-3129
dc.identifier.issn	2147-3188
dc.identifier.uri	https://app.trdizin.gov.tr/makale/TXpjNE56Z3pNdz09/the-electrical-properties-of-fabricated-pentacene-based-phototransistor-with-polystyrene-gate-insulator
dc.identifier.uri	http://dspace.beu.edu.tr:8080/xmlui/handle/20.500.12643/3211
dc.description.abstract	In this study, the fabrication of top contact pentacene based phototransistor having polystyrene gate dielectric hasbeen carried out. To analyze the surface morphology of polystyrene insulator and pentacene active layer, scanningelectron microscopy (SEM)
dc.description.abstract	Bu çalışmada, polistren kapı dielektrikli üst kontak pentasen tabanlı fototransistör imalatı yapılmıştır. Polistren yalıtkanının ve pentasen aktif tabakanın yüzey morfolojisini analiz etmek için, taramalı elektron mikroskobu (SEM) kullanılmıştır. Pentas
dc.language.iso	Turkish
dc.source	Bitlis Eren Üniversitesi Fen Bilimleri Dergisi
dc.title	The Electrical Properties Of Fabricated Pentacene Based Phototransistor With Polystyrene Gate Insulator
dc.identifier.issue	3
dc.identifier.startpage	1031
dc.identifier.endpage	1039
dc.identifier.volume	9

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