Synthesis and characterization of p-GaSe thin films and the analyses of I–V and C–V measurements of p-GaSe/p-Si heterojunction under electron irradiation

dc.contributor.author	Çınar, Demir, K.
dc.contributor.author	Aydoğan, Ş.
dc.contributor.author	Gür, E.
dc.contributor.author	Coşkun, C.
dc.contributor.author	Aygün, Z.
dc.date.accessioned	2021-12-16T10:12:17Z
dc.date.available	2021-12-16T10:12:17Z
dc.date.issued	2017
dc.identifier.issn	10420150
dc.identifier.uri	https://doi.org/10.1080/10420150.2017.1377713
dc.identifier.uri	http://dspace.beu.edu.tr:8080/xmlui/handle/20.500.12643/13088
dc.description.abstract	Gallium Selenide (GaSe) thin films were grown by the electrochemical deposition (ECD) technique on Indium tin oxide (ITO) and p-Si (100) substrates. The Electron paramagnetic resonance (EPR) spectrum of GaSe thin films’ growth on ITO was recorded at room
dc.language.iso	English
dc.publisher	Taylor and Francis Inc.
dc.source	Radiation Effects and Defects in Solids
dc.title	Synthesis and characterization of p-GaSe thin films and the analyses of I–V and C–V measurements of p-GaSe/p-Si heterojunction under electron irradiation
dc.type	Article
dc.identifier.issue	07-Aug
dc.identifier.startpage	650
dc.identifier.endpage	663
dc.identifier.doi	10.1080/10420150.2017.1377713
dc.identifier.scopus	2-s2.0-85031421101
dc.identifier.volume	172

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