Synthesis and characterization of p-GaSe thin films and the analyses of I–V and C–V measurements of p-GaSe/p-Si heterojunction under electron irradiation

Abstract

Gallium Selenide (GaSe) thin films were grown by the electrochemical deposition (ECD) technique on Indium tin oxide (ITO) and p-Si (100) substrates. The Electron paramagnetic resonance (EPR) spectrum of GaSe thin films’ growth on ITO was recorded at room