dc.contributor.author | Koksal, K. | |
dc.contributor.author | Sahin, M. | |
dc.date.accessioned | 16/12/21 12:08 | |
dc.date.available | 16/12/21 12:08 | |
dc.date.issued | 2012 | |
dc.identifier.issn | 1434-6028 | |
dc.identifier.uri | http://dspace.beu.edu.tr:8080/xmlui/handle/20.500.12643/10710 | |
dc.identifier.uri | https://doi.org/10.1140/epjb/e2012-30547-6 | |
dc.description.abstract | In this study, we investigate the linear and third order nonlinear optical properties of InGaAsN/GaAs depending on nitrogen content and laser dressing parameter. As theoretical models, band anticrossing and model solid theory are used. In order to obtain | |
dc.description.sponsorship | TUBITAKTurkiye Bilimsel ve Teknolojik Arastirma Kurumu (TUBITAK) | |
dc.language.iso | English | |
dc.publisher | Sprınger | |
dc.source | European Physıcal Journal B | |
dc.title | The effect of dilute nitrogen on nonlinear optical properties of the InGaAsN/GaAs single quantum wells | |
dc.type | Article | |
dc.identifier.issue | 10 | |
dc.identifier.doi | 10.1140/epjb/e2012-30547-6 | |
dc.identifier.wos | WOS:000310646100024 | |
dc.identifier.volume | 85 | |