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dc.contributor.authorKoksal, K.
dc.contributor.authorSahin, M.
dc.date.accessioned16/12/21 12:08
dc.date.available16/12/21 12:08
dc.date.issued2012
dc.identifier.issn1434-6028
dc.identifier.urihttp://dspace.beu.edu.tr:8080/xmlui/handle/20.500.12643/10710
dc.identifier.urihttps://doi.org/10.1140/epjb/e2012-30547-6
dc.description.abstractIn this study, we investigate the linear and third order nonlinear optical properties of InGaAsN/GaAs depending on nitrogen content and laser dressing parameter. As theoretical models, band anticrossing and model solid theory are used. In order to obtain
dc.description.sponsorshipTUBITAKTurkiye Bilimsel ve Teknolojik Arastirma Kurumu (TUBITAK)
dc.language.isoEnglish
dc.publisherSprınger
dc.sourceEuropean Physıcal Journal B
dc.titleThe effect of dilute nitrogen on nonlinear optical properties of the InGaAsN/GaAs single quantum wells
dc.typeArticle
dc.identifier.issue10
dc.identifier.doi10.1140/epjb/e2012-30547-6
dc.identifier.wosWOS:000310646100024
dc.identifier.volume85


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