The effect of dilute nitrogen on nonlinear optical properties of the InGaAsN/GaAs single quantum wells
Abstract
In this study, we investigate the linear and third order nonlinear optical properties of InGaAsN/GaAs depending on nitrogen content and laser dressing parameter. As theoretical models, band anticrossing and model solid theory are used. In order to obtain
URI
http://dspace.beu.edu.tr:8080/xmlui/handle/20.500.12643/10710https://doi.org/10.1140/epjb/e2012-30547-6
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