An analysis of the effect of nitrogen and a screened (by free carriers) Coulomb field on the binding energy of hydrogenic shallow donors in GaInAsN
Abstract
The effect of nitrogen concentration on the screening with free carriers and binding energy of hydrogenic shallow donors in GaInAsN alloys is investigated. The binding energy is calculated using a novel algebraic model which was proposed recently by Gonul
URI
http://dspace.beu.edu.tr:8080/xmlui/handle/20.500.12643/10793https://doi.org/10.1016/j.spmi.2010.04.007
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