The comparison of the band alignment of GaInAsN quantum wells on GaAs and InP substrates for (001) and (111) orientations
Abstract
The aim of this paper is to examine the effect of growth orientation and dilute nitride on the band alignment of GaInAs quantum wells on GaAs and InP substrates by means of model solid theory. The study provides a comparison of the band alignment and the
URI
https://doi.org/10.1016/j.physe.2010.11.004http://dspace.beu.edu.tr:8080/xmlui/handle/20.500.12643/10772
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