Synthesis and characterization of p-GaSe thin films and the analyses of I-V and C-V measurements of p-GaSe/p-Si heterojunction under electron irradiation

dc.contributor.author	Demir, K. Cinar
dc.contributor.author	Aydogan, S.
dc.contributor.author	Gur, Emre
dc.contributor.author	Coskun, C.
dc.contributor.author	Aygun, Z.
dc.date.accessioned	2021-12-16T09:07:30Z
dc.date.available	2021-12-16T09:07:30Z
dc.date.issued	2017
dc.identifier.issn	1042-0150
dc.identifier.uri	https://doi.org/10.1080/10420150.2017.1377713
dc.identifier.uri	http://dspace.beu.edu.tr:8080/xmlui/handle/20.500.12643/10396
dc.description.abstract	Gallium Selenide (GaSe) thin films were grown by the electrochemical deposition (ECD) technique on Indium tin oxide (ITO) and p-Si (100) substrates. The Electron paramagnetic resonance (EPR) spectrum of GaSe thin films' growth on ITO was recorded at room
dc.language.iso	English
dc.publisher	Taylor & Francıs Ltd
dc.source	Radıatıon Effects And Defects In Solıds
dc.title	Synthesis and characterization of p-GaSe thin films and the analyses of I-V and C-V measurements of p-GaSe/p-Si heterojunction under electron irradiation
dc.type	Article
dc.identifier.issue	7-8
dc.identifier.startpage	650
dc.identifier.endpage	663
dc.identifier.doi	10.1080/10420150.2017.1377713
dc.identifier.wos	WOS:000415686200011
dc.identifier.volume	172

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