The comparison of the band alignment of GaInAsN quantum wells on GaAs and InP substrates for (001) and (111) orientations

dc.contributor.author	Koksal, K.
dc.contributor.author	Gonul, B.
dc.date.accessioned	2021-12-16T09:08:37Z
dc.date.available	2021-12-16T09:08:37Z
dc.date.issued	2011
dc.identifier.issn	1386-9477
dc.identifier.uri	https://doi.org/10.1016/j.physe.2010.11.004
dc.identifier.uri	http://dspace.beu.edu.tr:8080/xmlui/handle/20.500.12643/10772
dc.description.abstract	The aim of this paper is to examine the effect of growth orientation and dilute nitride on the band alignment of GaInAs quantum wells on GaAs and InP substrates by means of model solid theory. The study provides a comparison of the band alignment and the
dc.language.iso	English
dc.publisher	Elsevıer
dc.source	Physıca E-Low-Dımensıonal Systems & Nanostructures
dc.title	The comparison of the band alignment of GaInAsN quantum wells on GaAs and InP substrates for (001) and (111) orientations
dc.type	Article
dc.identifier.issue	4
dc.identifier.startpage	919
dc.identifier.endpage	923
dc.identifier.doi	10.1016/j.physe.2010.11.004
dc.identifier.wos	WOS:000287903800014
dc.identifier.volume	43

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