The Electrical Properties of Fabricated Pentacene Based Phototransistor with Polystyrene Gate Insulator

Abstract

In this study, the fabrication of top contact pentacene based phototransistor having polystyrene gate dielectric has been carried out. To analyze the surface morphology of polystyrene insulator and pentacene active layer, scanning electron microscopy (SEM) has been used. The electrical characterization of pentacene based phototransistor and also the effect of illumination on the output characteristics have been investigated. The obtained mobility value and on/off ratio of the transistor are 5×10-3 cm2/Vs and ~102, respectively. The increase of the drain current with increasing illumination intensity indicates that the light acts as an additional terminal. Also, this fabricated device behaves as a phototransistor because of its reaction to the illumination.